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Crossbar to Present Newly-Unveiled RRAM Technology at Flash Memory Summit 2013

Aug 13, 2013

SANTA CLARA, CA – AUGUST 13, 2013 – Speaking at an industry conference for the first time, Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, today announced it will present at Flash Memory Summit on Wednesday, August 14, 2013, in Santa Clara, CA. Vice President of Engineering and co-Founder Hagop Nazarian, will speak about the company’s Resistive RAM (RRAM)-based technology, creating a new generation of non-volatile memory. Crossbar’s RRAM is capable of storing up to one terabyte (TB) of data on a single 200mm2 chip, and its structure is simple enough to stack onto logic in 3D on the latest technology node, using standard CMOS processes, in existing fabs.

What: RRAM – New Technologies Track Crossbar’s Nazarian, along with executives and researchers from Sony, Panasonic, SK Hynix, Chuo University and the University of Tokyo, will discuss how RRAM development continues to surge throughout the memory industry, with record numbers of published papers and patent filings coming from major manufacturers, universities and memory start-ups. Mr. Nazarian will specifically address the limitations of current memory solutions and will provide a technical overview of Crossbar’s RRAM technology and how it can be used to create high density, high performance and reliable solid state systems. Dave Eggleston, principal at Intuitive Cognition Consulting Group, will moderate the panel.
Who: Hagop Nazarian, vice president of engineering and co-founder, Crossbar, Inc.
When: August 14, 2013 from 3:10 – 4:15 p.m. PST
Where: Santa Clara Convention Center, Santa Clara, CA

About Crossbar, Inc.

Founded in 2010, Crossbar, a start-up based in Santa Clara, California, is the inventor of a new class of non-volatile RRAM memory technology. Designed to usher in a new era of electronics innovation, Crossbar will deliver up to a terabyte (TB) of storage on a single-chip the size of a postage stamp, with very low power, very high performance and compatibility with standard CMOS semiconductor manufacturing processes. As the exclusive holder of resistive RAM (RRAM) patents from the University of Michigan, Crossbar has filed 100 unique patents, with 30 already issued, relating to the development, commercialization and manufacturing of RRAM technology. Privately held, Crossbar is backed by Artiman Ventures, Kleiner Perkins Caufield & Byers and Northern Light Venture Capital. For more information, visit or follow us on Twitter and LinkedIn.

About The Flash Memory Summit

The Flash Memory Summit is the only conference dedicated entirely to flash memory and its applications. The Summit features half-day tutorials, workshops, paper and panel sessions, keynotes, roundtables, special sessions, and exhibits. Subjects include hardware, software, design methods, consumer applications, embedded applications, computer and communications applications, alternative technologies, programming methods, testing, standards, and market research.

Crossbar Media Contact:
Nicole Conley
Tanis Communications
Tel: (408) 295-4309 ×111

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